SiC Is poised for significant growth, driven by its advantageous properties and rising applications: 1 of those specific properties is that gate oxides in SiC-based power devices are usually characterized by a relatively large number of interface states, leading to the so-termed threshold-voltage hysteresis. Due to the optimized gate oxide https://www.quora.com/profile/Trevor-Flatcher-2/Prospects-for-Silicon-Carbide-in-Solar-Cells-Silicon-Carbide-SiC-has-emerged-as-a-promising-material-for-enhancing-th